The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2007
Filed:
May. 20, 2004
Applicant:
Hirofumi Komori, Kanagawa, JP;
Inventor:
Hirofumi Komori, Kanagawa, JP;
Assignee:
Innotech Corporation, Yokohama-shi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/062 (2006.01); H01L 21/113 (2006.01);
U.S. Cl.
CPC ...
Abstract
The MOS type solid-state imaging device has plural pixels each of which comprises a photo-diode and a MOS transistor on a substrate. A gate electrode is formed on the channel dope layer formed in the surface of the p-type well layer. By ion implantation of n-type impurity ions via the gate electrode as the mask, the n-type source region and the drain region are formed in the region corresponding to the MOS transistor, and the n-type impurity region is also formed in the region corresponding to the photo-diode. In the well layer, a high impurity density region as a hole pocket is self-aligned to the gate electrode.