The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2007
Filed:
May. 31, 2004
Ken Nakanishi, Kashihara, JP;
Hiroshi Aichi, Matsusaka, JP;
Ken Nakanishi, Kashihara, JP;
Hiroshi Aichi, Matsusaka, JP;
Sharp Kabushiki Kaisha, Osaka-Shi, JP;
Abstract
An ion doping system includes a chamber, an exhausting sectionfor exhausting gases from the chamber, an ion sourceprovided for the chamber, and an accelerating sectionfor extracting the ions, generated in the ion source, from the ion sourceand accelerating the ions toward a target. The ion sourceincludes an inlet portto introduce a gas including a dopant element, a filamentemitting thermo electrons, and an anode electrodeto produce an arc discharge between the filament and itself. The ion sourcedecomposes the gas through the arc discharge, thereby generating ions including the dopant element. The ion doping system controls the arc discharge such that a constant amount of arc current flows between the filament and the anode electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile