The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2007
Filed:
Feb. 14, 2005
Applicant:
Bum Ki Moon, LaGrangeville, NY (US);
Inventor:
Bum Ki Moon, LaGrangeville, NY (US);
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods of forming barrier layers and structures thereof are disclosed. A nitrogen rich region is formed at a top surface of a barrier layer by exposing the barrier layer to a nitridation treatment. The nitrogen rich region increases the oxidation resistance of the barrier layer. The barrier layers have improved diffusion barrier properties. A stack of barrier layers may be formed, with one or more of the barrier layers in the stack being exposed to a nitridation treatment.