The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2007
Filed:
Oct. 16, 2003
Kyoung-woo Lee, Seoul, KR;
Wan-jae Park, Kyungki-do, KR;
Jeong-hoon Ahn, Seoul, KR;
Kyung-tae Lee, Kyungki-do, KR;
Mu-kyeng Jung, Kyungki-do, KR;
Yong-jun Lee, Kyungki-do, KR;
Il-goo Kim, Kyungki-do, KR;
Soo-geun Lee, Kyungki-do, KR;
Kyoung-woo Lee, Seoul, KR;
Wan-jae Park, Kyungki-do, KR;
Jeong-hoon Ahn, Seoul, KR;
Kyung-tae Lee, Kyungki-do, KR;
Mu-kyeng Jung, Kyungki-do, KR;
Yong-jun Lee, Kyungki-do, KR;
Il-goo Kim, Kyungki-do, KR;
Soo-geun Lee, Kyungki-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
Embodiments of the invention include a MIM capacitor having a high capacitance with improved manufacturability. Such a capacitor includes an upper electrode, a lower electrode, and a dielectric layer that is intermediate the upper and the lower electrodes. A first voltage can be applied to the upper electrode and a second voltage, which is different from the first voltage, can be applied to the lower electrode. A wire layer, through which the first voltage is applied to the upper electrode, is located in the same level as or in a lower level than the lower electrode.