The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2007
Filed:
Dec. 02, 2002
Julia Wan-ping Hsu, Berkeley Heights, NJ (US);
Yueh-lin Loo, Princeton, NJ (US);
John A. Rogers, New Providence, NJ (US);
Julia Wan-Ping Hsu, Berkeley Heights, NJ (US);
Yueh-Lin Loo, Princeton, NJ (US);
John A. Rogers, New Providence, NJ (US);
Lucent Technologies Inc., Murray Hill, NJ (US);
Abstract
The present invention provides a process for forming electrical contacts to a molecular layer in a nanoscale device, the nanoscale device, and a method of manufacturing an integrated circuit comprise such devices. The process includes coating a surface of a stamp with a metal layer and forming an attached layer of anchored molecules by coupling first ends of the anchored molecules to a conductive or semiconductive substrate. The process also includes placing the metal layer in contact with the attached layer of anchored molecules such that the metal layer chemically bonds to free ends of the anchored molecules. The resulting devices produced have superior reliability as compared to conventional prepared devices.