The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 05, 2007

Filed:

Apr. 24, 2003
Applicants:

Jin Murayama, Miyagi, JP;

Koichi Kimura, Kanagawa, JP;

Shintaro Washizu, Shizuoka, JP;

Fumitoshi Toyokawa, Miyagi, JP;

Inventors:

Jin Murayama, Miyagi, JP;

Koichi Kimura, Kanagawa, JP;

Shintaro Washizu, Shizuoka, JP;

Fumitoshi Toyokawa, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

An MEM unit according to the invention comprises an Si (silicon) substratehaving such a thickness as to transmit a visible light therethrough, an insulating layerformed in contact with the upper surface of the Si substrate, a lower electrode layerformed in contact with the upper surface of the insulating layer, a sacrificial layer gapof a space formed in the partial region of the upper surface of the lower electrode layer, a movable filmformed on the upper surface of the lower electrode layerto cover the sacrificial layer gap, an upper electrodeformed in contact with the upper part of the movable film, a contact holepenetrating to reach the surface of the lower electrode layerfrom the surface of the movable film, and a lower electrodeformed from the surroundings of the upper part of the contact holeto the surface of the lower electrode layerthrough the contact hole


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