The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2007
Filed:
Feb. 10, 2005
Thomas Mikolajick, Dresden, DE;
Thomas Mikolajick, Dresden, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A memory cell patterned as a trench transistor is provided with a first gate electrode () as auxiliary gate for source-side injection and a second gate electrode () electrically insulated therefrom, which are arranged in the trench, and has, at the trench walls, a storage layer sequence () provided for charge trapping and comprising a storage layer () between boundary layers (). The first gate electrode () and the second gate electrode () are electrically insulated from one another, which can be effected by means of a portion of the storage layer sequence (). Source/drain regions () are arranged on the top side laterally with respect to the trenches. Word lines (), source/drain lines and control gate lines are present for the electrical driving.