The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2007
Filed:
Dec. 23, 2004
Mira Ben-tzur, Sunnyvale, CA (US);
Krishnaswamy Ramkumar, San Jose, CA (US);
James Hunter, Campbell, CA (US);
Thurman J. Rodgers, Woodside, CA (US);
Mike Bruner, Saratoga, CA (US);
Klyoko Ikeuchi, Sunnyvale, CA (US);
Mira Ben-Tzur, Sunnyvale, CA (US);
Krishnaswamy Ramkumar, San Jose, CA (US);
James Hunter, Campbell, CA (US);
Thurman J. Rodgers, Woodside, CA (US);
Mike Bruner, Saratoga, CA (US);
Klyoko Ikeuchi, Sunnyvale, CA (US);
Cypress Semiconductor Corporation, San Jose, CA (US);
Abstract
In one embodiment, a sacrificial layer is deposited over a base layer. The sacrificial layer is used to define a subsequently formed floating metal structure. The floating metal structure may be anchored into the base layer. Once the floating metal structure is formed, the sacrificial layer surrounding the floating metal structure is etched to create a unity-k dielectric region separating the floating metal structure from the base layer. The unity-k dielectric region also separates the floating metal structure from another floating metal structure. In one embodiment, a noble gas fluoride such as xenon difluoride is used to etch a sacrificial layer of polycrystalline silicon.