The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2007
Filed:
Jul. 28, 2005
Masanori Ogura, Atsugi, JP;
Fumihiro Inui, Yokohama, JP;
Toru Koizumi, Yokohama, JP;
Seiichiro Sakai, Zama, JP;
Masanori Ogura, Atsugi, JP;
Fumihiro Inui, Yokohama, JP;
Toru Koizumi, Yokohama, JP;
Seiichiro Sakai, Zama, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
The invention is to suppress a leak current in a photodiode and an unevenness in the leak currents. In a photoelectric converting device including a channel stop area of a higher concentration than in an element isolating insulation film formed between a photodiode, having an n-type semiconductor area formed in a p-type semiconductor, and an adjacent element, and in a p-type semiconductor layer formed under the element isolating insulation film, and a wiring layer formed in a part on the element isolating insulation film, the wiring layers on the element isolating insulation film adjacent to the photodiodes are unified in an effective area and a potential, and a p-type dark current reducing area of a higher concentration than in the channel stop area is provided in at least a part of an area opposed to the wiring layer across the element isolating insulation film.