The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2007
Filed:
May. 02, 2005
Franz Eberhard, Regensburg, DE;
Uwe Strauss, Bad Abbach, DE;
Ulrich Zehnder, Regensburg, DE;
Andreas Weimar, Regensburg, DE;
Raimund Oberschmid, Sinzing, DE;
Franz Eberhard, Regensburg, DE;
Uwe Strauss, Bad Abbach, DE;
Ulrich Zehnder, Regensburg, DE;
Andreas Weimar, Regensburg, DE;
Raimund Oberschmid, Sinzing, DE;
Osram Opto Semiconductors GmbH, Regensburg, DE;
Abstract
An optoelectronic component having a semiconductor chip containing a semiconductor layer sequence () with a radiation-emitting active zone (), the semiconductor layer sequence () having sidewalls (). A connection contact () is provided for impressing current into the active zone. A first current expansion layer () adjoins a semiconductor layer () of the semiconductor layer sequence () and a second current expansion layer () is provided between the semiconductor layer sequence () and the connection contact (). The first current expansion layer () has a larger sheet resistance than the second current expansion layer () and forms an ohmic contact with the adjoining semiconductor layer (). The second current expansion layer () is applied to a partial region of the first current expansion layer () which is at a distance from the sidewalls ().