The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2007
Filed:
Oct. 19, 2005
Applicants:
Lin-en Chou, Hsinchu, TW;
Hung-che Ting, Hsinchu, TW;
Inventors:
Lin-En Chou, Hsinchu, TW;
Hung-Che Ting, Hsinchu, TW;
Assignee:
Industrial Technology Research Institute, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming a silicon oxynitride layer, suitable to be used in the production of semiconductor devices, e.g. poly-silicon thin film transistors, is provided. A plasma surface treatment is performed over a substrate after a silicon nitride/silicon oxide layer has been formed on the substrate by a glow discharge system to transform the silicon nitride/silicon oxide layer into a silicon oxynitride layer. The semiconductor device may be completely manufactured in simplex equipment. Therefore, the production time and production cost are favorably reduced.