The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2007
Filed:
Apr. 16, 2004
Husam N. Alshareef, Austin, TX (US);
Mark R. Visokay, Richardson, TX (US);
Antonio Luis Pacheco Rotondaro, Dallas, TX (US);
Luigi Colombo, Dallas, TX (US);
Husam N. Alshareef, Austin, TX (US);
Mark R. Visokay, Richardson, TX (US);
Antonio Luis Pacheco Rotondaro, Dallas, TX (US);
Luigi Colombo, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention provides a semiconductor device, a method of manufacture therefor, and a method for manufacturing an integrated circuit. The semiconductor device (), among other possible elements, includes a first transistor () located over a semiconductor substrate (), wherein the first transistor () has a metal gate electrode () having a work function, and a second transistor () located over the semiconductor substrate () and proximate the first transistor (), wherein the second transistor () has a plasma altered metal gate electrode () having a different work function.