The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2007
Filed:
Mar. 23, 2004
Applicants:
Toshimitsu Taniguchi, Gunma, JP;
Takashi Arai, Tochigi, JP;
Masashige Aoyama, Gunma, JP;
Inventors:
Assignee:
Sanyo Electric Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 31/113 (2006.01); H01L 31/062 (2006.01); H01L 29/94 (2006.01); H01L 31/119 (2006.01);
U.S. Cl.
CPC ...
Abstract
This invention is characterized in that, a gate electrodeF formed on a P-type wellvia a gate oxide film, a high-concentration N-type source layer and a high-concentration N-type drain layerrespectively formed apart from the gate electrode and a low-concentration N-type source layer and a low-concentration N-type drain layer respectively formed so that they respectively surround the N-type source layer and the N-type drain layerand respectively parted by a P-type body layer formed under the gate electrodeF are provided.