The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2007
Filed:
Mar. 19, 2004
Keinichi Tokano, Kawasaki, JP;
Yoshihiko Saito, Yokosuka, JP;
Shigeo Kouzuki, Kawasaki, JP;
Yasunori Usui, Yokohama, JP;
Masaru Izumisawa, Kawasaki, JP;
Takahiro Kawano, Kawasaki, JP;
Keinichi Tokano, Kawasaki, JP;
Yoshihiko Saito, Yokosuka, JP;
Shigeo Kouzuki, Kawasaki, JP;
Yasunori Usui, Yokohama, JP;
Masaru Izumisawa, Kawasaki, JP;
Takahiro Kawano, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
As and B are implanted to side surfaces of trenchesby a rotation ion implanting method, and by using a difference between these impurities in diffusion coefficient, the structure in which an n-type epitaxial Si layer is interposed between trenchesis converted into a semiconductor structure consisting of n-type pillar layer/p-type pillar layer/n-type pillar layerlining up. The structure can function substantially the same role as that of a super junction structure.