The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2007
Filed:
Aug. 25, 2005
Kouji Nakahara, Kunitachi, JP;
Makoto Kudo, Hamura, JP;
Shigehisa Tanaka, Kokubunji, JP;
Masataka Shirai, Higashimurayama, JP;
Kouji Nakahara, Kunitachi, JP;
Makoto Kudo, Hamura, JP;
Shigehisa Tanaka, Kokubunji, JP;
Masataka Shirai, Higashimurayama, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
In the semiconductor laser or electro-absorption optical modulator that includes strained quantum well layers as active layers, making laser characteristics or modulator characteristics adequate has seen the respective limits since band structures, especially, ΔEc and ΔEv, have been unable to be adjusted independently. This invention is constructed by stacking an n-type InGaAlAs-GRIN-SCH layer, an MQW layer, a p-type InGaAlAs-GRIN-SCH layer, a p-type InAlAs electron-stopping layer, and others, in that order, on an n-type InP wafer; wherein the MQW layerincludes InGaAlAs-strained quantum well layers and InGaAlAsSb-formed barrier layers each having strain of an opposite sign to the strain applied to the quantum well layers.