The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 29, 2007

Filed:

Jun. 16, 2005
Applicant:

Katsuo Takano, Nagano, JP;

Inventor:

Katsuo Takano, Nagano, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

A first hydrogen barrier film and an intermediate layer are formed on an interlayer dielectric film. A ferroelectric capacitor is formed on the intermediate layer, and a second hydrogen barrier film is formed over the entire surface including on the upper surface and side surfaces of the ferroelectric capacitor and on the intermediate layer. Then, the second hydrogen barrier film and the intermediate layer are removed while leaving at least portions on the upper surface and side surfaces of the ferroelectric capacitor. Then, a third hydrogen barrier film is formed on the second hydrogen barrier film, on side surfaces of the second hydrogen barrier film and the intermediate layer, and on the first hydrogen barrier film.


Find Patent Forward Citations

Takano, Katsuo. (2007). Method for manufacturing semiconductor device, and semiconductor device (U.S. Patent No. 7223614). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7223614

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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