The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 2007

Filed:

May. 13, 2004
Applicants:

Akira Tanaka, Kanagawa, JP;

Yoshiyuki Itoh, Saitama, JP;

Osamu Horiuchi, Kanagawa, JP;

Akio Makuta, Kanagawa, JP;

Koichi Gen-ei, Chiba, JP;

Hideo Shiozawa, Kanagawa, JP;

Inventors:

Akira Tanaka, Kanagawa, JP;

Yoshiyuki Itoh, Saitama, JP;

Osamu Horiuchi, Kanagawa, JP;

Akio Makuta, Kanagawa, JP;

Koichi Gen-Ei, Chiba, JP;

Hideo Shiozawa, Kanagawa, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-Ku, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor laser device comprises: a cladding layer of a first conductivity type; an active layer provided on the cladding layer; and a cladding layer of a second conductivity type provided on the active layer. At least a part of the cladding layer of the second conductivity type has a ridge stripe. The ridge stripe includes: an upper part having substantially vertical sidewalls; and a lower portion having sidewalls inclined so that the stripe becomes wider toward the active layer.


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