The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 2007

Filed:

May. 12, 2005
Applicants:

Bhupendra K. Ahuja, Fremont, CA (US);

Hoa VU, Milpitas, CA (US);

Carlos Laber, Los Altos, CA (US);

Inventors:

Bhupendra K. Ahuja, Fremont, CA (US);

Hoa Vu, Milpitas, CA (US);

Carlos Laber, Los Altos, CA (US);

Assignee:

Intersil Americas, Inc, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 35/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A circuit and corresponding method for a precision floating gate voltage reference that uses a feedback loop, conduction of tunnel devices, and a bandgap cell to accurately program a desired charge level on a floating gate and provide a predictable and programmable temperature coefficient parameter for such voltage reference. In one embodiment, a bandgap cell is coupled through a capacitor to the floating gate storage node for providing a voltage source for canceling the temperature coefficient (TC) of the storage capacitor. The circuit and method enables TC to be minimized by either choosing the proper voltage source characteristics or alternatively, by choosing the proper ratio of two capacitors. The bandgap cell can alternatively be designed to have positive TC (PTAT voltage sources) or negative TC (VBE junction).


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