The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2007
Filed:
Oct. 04, 2005
Kenji Oota, Tokyo, JP;
Futoshi Tokunoh, Tokyo, JP;
Kenji Oota, Tokyo, JP;
Futoshi Tokunoh, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A gate electrode () is formed on the outer peripheral step portion (') of a semiconductor substrate () so as to face a pressure-contact supporting block (), and a convex contacting portion () is formed on a predetermined position on the surface of the gate electrode to contact the pressure contact supporting block. The surface area of the gate electrode ranging from the inner periphery to a position adjacent to the convex contacting portion, is coated with an insulation film (). The convex contacting portion () is formed of a convex portion integral with the gate electrode or formed of another gate electrode (′).