The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2007
Filed:
Oct. 19, 2004
Julian Chang, Shanghai, CN;
Yuanwei Zheng, Shanghai, CN;
Julian Chang, Shanghai, CN;
YuanWei Zheng, Shanghai, CN;
Grace Semiconductor Manufacturing Corporation, Shanghai, CN;
Abstract
The present invention discloses a semiconductor structure avoiding the poly stringer formation in semiconductor processing. A semiconductor device is divided into a memory cell area and a peripheral portion. A plurality of parallel first isolation devices are positioned in the semiconductor substrate in the memory cell area. A second isolation device is positioned in the semiconductor substrate in the peripheral portion, and parallel with the first isolation device. A dummy buried doping region is positioned in the semiconductor substrate, and is positioned between the memory cell device and the peripheral portion and parallel with the second isolation device. An oxide area is formed on the dummy buried doping region. The dummy buried doping region and the oxide region can prevent poly string formation during subsequent processing.