The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7221016 B1

PDF
Full Text
Expired
Date of Patent:
May. 22, 2007

Filed:

May. 10, 2004
Applicants:

Satoshi Inoue, Suwa, JP;

Piero Migliorato, Cambridge, GB;

Inventors:

Satoshi Inoue, Suwa, JP;

Piero Migliorato, Cambridge, GB;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract

A TFT memoryis provided with a polysilicon layer, wherein each region of the source, the channeland the drainare formed on a substrate, and gate oxide films (insulating films)andare formed on the polysilicon layer; and a plurality of silicon particlesfor trapping the charge of injected carriers are placed between the gate oxide filmsand. Specifically, the gate oxide films comprise a first gate oxide filmand a second gate oxide filmformed on the first gate oxide film; the plurality of silicon particlesare located between the first gate oxide filmand the second gate oxide film, and the first gate oxide filmis formed in an extremely thin thickness.


Find Patent Forward Citations

Inoue, Satoshi. (2007). Semiconductor device with memory function and method of manufacture (U.S. Patent No. 7221016). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7221016

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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