Negative resistance field-effect device

Abstract

A negative resistance field-effect element that is a negative differential resistance field-effect element capable of achieving negative resistance at a low power supply voltage (low drain voltage) and also enabling securement of a high PVCR is formed on its InP substratehaving an asymmetrical V-groove whose surface on one side is a (100) plane and surface on the other side is a (011) plane with an InAlAs barrier layer () that has a trench (TR) one of whose opposed lateral faces is a (111) A plane and the other of which is a (331) B plane. An InGaAs quantum wire () that has a relatively narrow energy band gap is formed at the trench bottom surface as a high-mobility channel. An InAlAs modulation-doped layer () having a relatively wide energy band gap is formed on the quantum wire as a low-mobility channel. A source electrode () and a drain electrode () each in electrical continuity with the quantum wire () constituting the high-mobility channel through a contact layer () and extending in the longitudinal direction of the quantum wire () as spaced from each other, and a gate electrode () provided between the source electrode () and the drain electrode () to face the low-mobility channel () through an insulating layer or a Schottky junction, are provided. Owing to the foregoing configuration, a very narrow-width quantum wire whose lateral confinement size can, without restriction by the lithographic technology limit, be made 100 nm or less is usable as a high-mobility channel, whereby there can be obtained a negative resistance field-effect element that develops a negative characteristic at a low power supply voltage and enables securement of a high PVCR.