The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2007
Filed:
Feb. 04, 2005
Katsuyuki Sekine, Kanagawa, JP;
Akio Kaneko, Kanagawa, JP;
Motoyuki Sato, Kanagawa, JP;
Seiji Inumiya, Kanagawa, JP;
Kazuhiro Eguchi, Kanagawa, JP;
Katsuyuki Sekine, Kanagawa, JP;
Akio Kaneko, Kanagawa, JP;
Motoyuki Sato, Kanagawa, JP;
Seiji Inumiya, Kanagawa, JP;
Kazuhiro Eguchi, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device including a gate insulating film selectively formed on a predetermined region of a semiconductor substrate; a gate electrode formed on said gate insulating film; and a source region and drain region formed, in a surface portion of said semiconductor substrate, on two sides of a channel region positioned below said gate electrode; wherein a carbon concentration in an interface where said gate insulating film is in contact with said gate electrode is not more than 5×10atoms/cm.