The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2007
Filed:
Jun. 28, 2004
Sang Don Lee, Gyeonggi-do, KR;
Yil Wook Kim, Seoul, KR;
Jin Hong Ahn, Gyeonggi-do, KR;
Young Jun Park, Seoul, KR;
Sang Don Lee, Gyeonggi-do, KR;
Yil Wook Kim, Seoul, KR;
Jin Hong Ahn, Gyeonggi-do, KR;
Young Jun Park, Seoul, KR;
Hynix Semiconductor, Inc, Icheon-Si, Gyeonggi-Do, unknown;
Abstract
A transistor and a method for manufacturing the same are disclosed. One cell transistor having silicon-insulator-silicon ('SIS') structure and two cell transistors having silicon-oxide-nitride-oxide-silicon ('SONOS') structure constitute the transistor of the present invention which can store 2 bits. The cell transistor having SIS structure and the cell transistors having SONOS structure share one common gate electrode so that the transistor of the present invention requires only one voltage generation and control circuit.