The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 2007

Filed:

Sep. 14, 2005
Applicants:

Seizo Fujimoto, Tokyo, JP;

Takafumi Hara, Tokyo, JP;

Masaaki Taruya, Tokyo, JP;

Inventors:

Seizo Fujimoto, Tokyo, JP;

Takafumi Hara, Tokyo, JP;

Masaaki Taruya, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01L 9/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor pressure sensor is not influenced by a charged object in a fluid to be measured or an electric field from the outside, so satisfactory sensitivity and accuracy can be ensured. The semiconductor pressure sensor is provided with a diaphragmthat responds to the pressure of the fluid to be measured. The diaphragm includes a silicon substrate with piezoresistive elements, which together constitute a bridge circuit, being embedded therein, and a shield film for electromagnetic shielding formed on a surface of the silicon substrate at a side thereof at which the fluid to be measured is in contact with the silicon substrate. The shield film is electrically connected to the silicon substrate so as to have the same potential as that of the silicon substrate.


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