The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2007
Filed:
Oct. 03, 2005
Peter J. Hopper, San Jose, CA (US);
Philipp Lindorfer, San Jose, CA (US);
Vladislav Vashchenko, Palo Alto, CA (US);
Robert Drury, Santa Clara, CA (US);
Peter J. Hopper, San Jose, CA (US);
Philipp Lindorfer, San Jose, CA (US);
Vladislav Vashchenko, Palo Alto, CA (US);
Robert Drury, Santa Clara, CA (US);
Eastman Kodak Company, Rochester, NY (US);
Abstract
The integration period of an imaging cell, or the time that an imaging cell is exposed to light energy, is substantially increased by utilizing a single-poly, electrically-programmable, read-only-memory (EPROM) structure to capture the light energy. Photogenerated electrons are formed in the channel region of the EPROM structure from the light energy. The photogenerated electrons are then accelerated into having ionizing collisions which, in turn, leads to electrons being injected onto the floating gate of the EPROM structure at a rate that is proportionate to the number of photons captured by the channel region.