The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2007
Filed:
Feb. 08, 2005
Applicant:
Kyle Spring, Temecula, CA (US);
Inventor:
Kyle Spring, Temecula, CA (US);
Assignee:
International Rectifier Corporation, El Segundo, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2006.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01);
U.S. Cl.
CPC ...
Abstract
A trench type power semiconductor device includes proud gate electrodes that extend out of the trenches and above the surface of the semiconductor body. These proud gate electrodes allow for making ultra-shallow source regions within the semiconductor body using, for example, a low temperature source drive. In addition, a method for manufacturing the trench type power semiconductor device includes a low temperature process flow once the gate electrodes are formed.