The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2007
Filed:
Dec. 15, 2004
James W. Adkisson, Jericho, VT (US);
John Ellis-monaghan, Grand Isle, VT (US);
Mark D. Jaffe, Shelburne, VT (US);
Jerome B. Lasky, Essex Junction, VT (US);
James W. Adkisson, Jericho, VT (US);
John Ellis-Monaghan, Grand Isle, VT (US);
Mark D. Jaffe, Shelburne, VT (US);
Jerome B. Lasky, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A novel image sensor cell structure and method of manufacture. The imaging sensor comprises a substrate, a gate comprising a dielectric layer and gate conductor formed on the dielectric layer, a collection well layer of a first conductivity type formed below a surface of the substrate adjacent a first side of the gate conductor, a pinning layer of a second conductivity type formed atop the collection well at the substrate surface, and a diffusion region of a first conductivity type formed adjacent a second side of the gate conductor, the gate conductor forming a channel region between the collection well layer and the diffusion region. Part of the gate conductor bottom is recessed below the surface of the substrate. Preferably, a portion of the gate conductor is recessed at or below a bottom surface of the pinning layer to a depth such that the collection well intersects the channel region.