The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2007
Filed:
Jan. 26, 2006
Keiji Tatani, Kanagawa, JP;
Hideshi Abe, Kanagawa, JP;
Masanori Ohashi, Nagasaki, JP;
Atsushi Masagaki, Kanagawa, JP;
Atsuhiko Yamamoto, Kanagawa, JP;
Masakazu Furukawa, Kanagawa, JP;
Keiji Tatani, Kanagawa, JP;
Hideshi Abe, Kanagawa, JP;
Masanori Ohashi, Nagasaki, JP;
Atsushi Masagaki, Kanagawa, JP;
Atsuhiko Yamamoto, Kanagawa, JP;
Masakazu Furukawa, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.