The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2007
Filed:
Oct. 10, 2003
Saichirou Kaneko, Yokosuka, JP;
Masakatsu Hoshi, Yokohama, JP;
Kraisorn Throngnumchai, Yokohama, JP;
Tetsuya Hayashi, Yokosuka, JP;
Hideaki Tanaka, Yokosuka, JP;
Teruyoshi Mihara, Yokosuka, JP;
Saichirou Kaneko, Yokosuka, JP;
Masakatsu Hoshi, Yokohama, JP;
Kraisorn Throngnumchai, Yokohama, JP;
Tetsuya Hayashi, Yokosuka, JP;
Hideaki Tanaka, Yokosuka, JP;
Teruyoshi Mihara, Yokosuka, JP;
Nissan Motor Co., Ltd., Kanagawa-ken, JP;
Abstract
The present invention-provides a tunnel-injection device which encompasses, a reception layer made of a first semiconductor, a barrier-forming layer made of a second semiconductor having a bandgap-narrower than the first semiconductor, being in metallurgical contact with the reception layer, a gate insulating film disposed on the barrier-forming layer. The gate electrode controls the width of the barrier generated at the heterojunction interface between the reception layer and the barrier-forming layer so as to change the tunneling probability of carriers through the barrier. The device further encompasses a carrier receiving region being contact with the reception layer and a carrier-supplying region being contact with the barrier-forming layer.