The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 2007

Filed:

May. 07, 2004
Applicants:

Robert J. Bosnyak, Tacoma, WA (US);

Robert J. Drost, Mountain View, CA (US);

Inventors:

Robert J. Bosnyak, Tacoma, WA (US);

Robert J. Drost, Mountain View, CA (US);

Assignee:

Sun Microsystems, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 27/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

One embodiment of the present invention provides a system for detecting light which is incident to a first semiconductor die. During operation, the system receives light at a photo-detector on the first semiconductor die, wherein associated circuitry converts the received light into a current. In doing so, the associated circuitry biases a gate voltage of an integrating transistor to be close to a threshold voltage of the integrating transistor, and applies the current from the photo-detector to the gate of the integrating transistor so that the current causes a charge to collect at the gate of the integrating transistor. This charge builds up and causes the integrating transistor to switch, thereby indicating that light has been received by the photo-detector.


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