The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2007
Filed:
Jul. 27, 2004
James Stewart, San Jose, CA (US);
Anthony Ho, Sunnyvale, CA (US);
Rudolf J. Hofmeister, Sunnyvale, CA (US);
Darin James Douma, Monrovia, CA (US);
Lucy G. Hosking, Santa Cruz, CA (US);
Andreas Weber, Los Altos, CA (US);
Jeffrey Bryant Price, Sunnyvale, CA (US);
James Stewart, San Jose, CA (US);
Anthony Ho, Sunnyvale, CA (US);
Rudolf J. Hofmeister, Sunnyvale, CA (US);
Darin James Douma, Monrovia, CA (US);
Lucy G. Hosking, Santa Cruz, CA (US);
Andreas Weber, Los Altos, CA (US);
Jeffrey Bryant Price, Sunnyvale, CA (US);
Finisar Corporation, Sunnyvale, CA (US);
Abstract
Methods and processes are disclosed for calibrating optoelectronic devices, such as optoelectronic transceivers and optoelectronic receivers, based upon an avalanche photodiode breakdown voltage. In general, the method involves adjusting a reverse-bias voltage of the avalanche photodiode until avalanche breakdown of the avalanche photodiode occurs. An optimized APD reverse-bias voltage is then determined by reducing the reverse-bias voltage at which avalanche breakdown occurs by a predetermined offset voltage. This process is performed at a variety of different temperatures. Information concerning each temperature and the corresponding optimized APD reverse-bias voltage is stored in a memory of the optoelectronic device.