The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2007
Filed:
Apr. 19, 2005
Connie Pin-chin Wang, Mountain View, CA (US);
Paul R. Besser, Sunnyvale, CA (US);
Jinsong Yin, Sunnyvale, CA (US);
Hieu T. Pham, Milpitas, CA (US);
Minh Van Ngo, Fremont, CA (US);
Connie Pin-Chin Wang, Mountain View, CA (US);
Paul R. Besser, Sunnyvale, CA (US);
Jinsong Yin, Sunnyvale, CA (US);
Hieu T. Pham, Milpitas, CA (US);
Minh Van Ngo, Fremont, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method for manufacturing a semiconductor component that inhibits formation of wormholes in a semiconductor substrate. A contact opening is formed in a dielectric layer disposed on a semiconductor substrate. The contact opening exposes a portion of the semiconductor substrate. A sacrificial layer of oxide is formed on the exposed portion of the semiconductor substrate and along the sidewalls of the contact opening. Silane is reacted with tungsten hexafluoride to form a hydrofluoric acid vapor and tungsten. The hydrofluoric acid vapor etches away the sacrificial oxide layer and a thin layer of tungsten is formed on the exposed portion of the semiconductor substrate. After forming the thin layer of tungsten, the reactants may be changed to more quickly fill the contact opening with tungsten.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile