The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2007
Filed:
Dec. 30, 2004
Kwan-ju Koh, Bucheon, KR;
Kwan-Ju Koh, Bucheon, KR;
Dongbu Electronics Co., Ltd., Seoul, KR;
Abstract
The disclosure provides methods of forming a silicon quantum dots for application in a semiconductor memory device. One example method includes sequentially forming a pad oxide film and a sacrificial insulation film on a silicon substrate; forming a wall layer by selectively etching the sacrificial insulation film; forming a spacer at the side wall of the wall layer; etching the silicon substrate as much as a predetermined thickness using the spacer as a mask, thereby forming a silicon pattern; forming a barrier film for burying the upper surface and the side surface of the silicon pattern; applying isotropic etching to the substrate using the barrier film as a mask; and oxidizing the isotropic etched substrate with thermal treatment.