The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2007
Filed:
Aug. 13, 2004
Hans Norström, Solna, SE;
Ted Johansson, Djursholm, SE;
Hans Norström, Solna, SE;
Ted Johansson, Djursholm, SE;
Infineon Technologies AG, Munich, DE;
Abstract
A method in the fabrication of an integrated bipolar circuit comprises the steps of: providing a p-type substrate; forming in the substrate a buried n+-type region and an n-type region above the buried n-type region; forming field isolation areas around the n-type region; forming a PMOS gate region on the n-type region; forming a diffused n-type contact from the upper surface of the substrate to the buried n-type region; the contact being separated from the n-type region; forming a p-type polysilicon source on the n-type region; forming a p-type source in the n-type region; forming a p-type drain in the n-type region; and connecting the PMOS transistor structure to operate as a PNP transistor, wherein the source is connected to the gate and constitutes an emitter of the PNP transistor; the drain constitutes a collector of the PNP transistor; and the n-type region constitutes a base of the PNP transistor.