The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2007
Filed:
Sep. 01, 2005
Masami Hashimoto, Hino, JP;
Takeshi Kijima, Matsumoto, JP;
Junichi Karasawa, Shimosuwa-machi, JP;
Mayumi Ueno, Chino, JP;
Masami Hashimoto, Hino, JP;
Takeshi Kijima, Matsumoto, JP;
Junichi Karasawa, Shimosuwa-machi, JP;
Mayumi Ueno, Chino, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
To provide a nondestructive-read ferroelectric memory capable of realizing high speed, high integration, and long service life. The present invention is provided with an MFSFEThaving a ferroelectric thin film at its gate portion, word line, bit line, and bit lineso as to apply voltage equal to or higher than the coercive electric field of the ferroelectric thin film between the bit lineand the word lineat first write timing and apply voltage equal to or higher than the coercive electric field between the bit lineand the word lineat second write timing, and applies voltage equal to or lower than the coercive electric field of the ferroelectric thin film between the bit lineand the word lineat first read timing to detect the current flowing between the both bit lines, and applies voltage equal to or lower than the coercive electric field between the bit lineand the word lineat second read timing to detect the current flowing between the both bit lines.