The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2007
Filed:
Sep. 17, 2002
Eiji Maruyama, Katano, JP;
Toshiaki Baba, Kobe, JP;
Eiji Maruyama, Katano, JP;
Toshiaki Baba, Kobe, JP;
Sanyo Electric Co., Ltd, Osaka, JP;
Abstract
An ITO film as a transparent conductive film is formed on a semiconductor layer comprising an amorphous semiconductor or a microcrystalline semiconductor, a comb-like collecting electrode is formed on the ITO film, and a cover glass containing alkaline ions is placed on the ITO film and collecting electrode with a resin film made of EVA between them. The (222) plane orientation degree of the ITO film (transparent conductive film) is not less than 1.0, preferably not less than 1.2 and not more than 2.6, and more preferably not less than 1.4 and not more than 2.5. Alternatively, the transparent conductive film has an orientation of (321) planes on the boundary side with respect to the semiconductor layer and mainly an orientation of (222) planes in the remaining portion. When the total thickness of the ITO film is 100 nm, the (321)/(222) diffraction strength ratio in a 10 nm-thick portion on the semiconductor layer side is not less than 0.5 and not more than 2.5.