The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 08, 2007

Filed:

Mar. 17, 2005
Applicants:

Po-hsun Sung, Longtan Township, Taoyuan County, TW;

Pei-yen Chen, Longtan Township, Taoyuan County, TW;

Yung-chung Chin, Longtan Township, Taoyuan County, TW;

Pei-zen Chang, Longtan Township, Taoyuan County, TW;

Yen-ming Pang, Longtan Township, Taoyuan County, TW;

Chi-ming Fang, Longtan Township, Taoyuan County, TW;

Chun-li Hou, Longtan Township, Taoyuan County, TW;

Inventors:

Po-Hsun Sung, Longtan Township, Taoyuan County, TW;

Pei-Yen Chen, Longtan Township, Taoyuan County, TW;

Yung-Chung Chin, Longtan Township, Taoyuan County, TW;

Pei-Zen Chang, Longtan Township, Taoyuan County, TW;

Yen-Ming Pang, Longtan Township, Taoyuan County, TW;

Chi-Ming Fang, Longtan Township, Taoyuan County, TW;

Chun-Li Hou, Longtan Township, Taoyuan County, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01);
U.S. Cl.
CPC ...
Abstract

A film bulk acoustic wave filter assembly includes a film bulk acoustic filter and an RF circuit. The film bulk acoustic filter unit cell includes a plurality of film bulk acoustic wave resonators. The number, area and arrangement of the resonators depend on the characteristics of the filter. In the film bulk acoustic wave filter, a metal layer made by CMOS processes is used as a lower electrode area of the film bulk acoustic wave filter or a suspended chamber. The film bulk acoustic filter can be integrated with the RF circuit using processes such as the CMOS process. It facilitates the integration of active devices, streamlining of system design and simplification of test processes, and has a great influence on the application of RF communication devices and integration of system-system-chip (SOC).


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