The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2007
Filed:
May. 23, 2005
Jong-pal Kim, Seoul, KR;
Sang-woo Lee, Seoul, KR;
Byeung-leul Lee, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method for fabricating a vertical offset structure that forms a complete vertical offset on a wafer includes a first trench forming step of forming first trenches on a wafer; a first etching step of performing a first patterning for determining etching positions of second and third trenches by depositing a first thin film on the wafer, performing a second patterning for temporarily protecting the etching position of the third trench by depositing a second thin film on the first thin film and the wafer, and then forming the second trenches by etching the wafer; a second etching step of forming a protection layer on side surfaces of the second trenches and then vertically extending the second trenches by etching the wafer; a third etching step of removing the second thin film and then forming the third trench by etching a position from which the second thin film is removed; and a fourth etching step of horizontally extending the second trenches vertically extended at the second etching step and the third trench by etching the wafer.