The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2007
Filed:
Oct. 15, 2004
Applicants:
Michinori Wachi, Hitachi, JP;
Kenya Itani, Hitachi, JP;
Inventors:
Michinori Wachi, Hitachi, JP;
Kenya Itani, Hitachi, JP;
Assignee:
Hitachi Cable, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 11/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
A Si-doped gallium arsenide single crystal substrate has a carrier concentration of 0.1×10to 5.0×10/cm. The substrate is made by Vertical Bridgeman (VB) method or Vertical Gradient Freeze (VGF) method, and a minimum value and a maximum value of the carrier concentration in substrate plane are within a dispersion of 10% or less of an average carrier concentration in substrate plane.
Wachi, Michinori. (2007). Si-doped gaas single crystal substrate (U.S. Patent No. 7214269). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7214269
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile