The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2007
Filed:
May. 23, 2005
Isao Fukushi, Kawasaki, JP;
Shoichiro Kawashima, Kawasaki, JP;
Isao Fukushi, Kawasaki, JP;
Shoichiro Kawashima, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A ferroelectric memory has a plurality of memory cells respectively having a cell transistor and ferroelectric capacitor whose one terminal is connected with the cell transistor, a plurality of word lines respectively connected with said cell transistor, a plurality of plate lines connected with the other terminal of said ferroelectric capacitor and intersecting with said word lines, a plurality of local bit lines connected with said cell transistors, and a global bit line that is selectively connected with local bit lines. Furthermore, the ferroelectric memory has a sensing amplifier unit that detects the amount of charging of the local bit lines from said memory cells while maintaining the potential of the local bit lines at a potential equivalent to the non-selected plate lines, during reading.