The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2007
Filed:
Aug. 29, 2005
Shuhei Kawai, Gunma, JP;
Shuhei Kawai, Gunma, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
A leakage path through a parasitic diode in a charge transfer MOS transistor is cut off to prevent increase in the power consumption and loss of control of a charge pump circuit. A first charge transfer MOS transistor and a second charge transfer MOS transistor are N-channel type and are connected in series with each other. A ground electric potential VSS is supplied to a source of the first charge transfer MOS transistor as an input electric potential, and an output electric potential is obtained from an output terminal connected with a drain of the second charge transfer MOS transistor. A back gate of the first charge transfer MOS transistor is set by a first switching circuit to either an electric potential at a connecting node between the first and the second charge transfer MOS transistors or the ground electric potential VSS.