The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2007
Filed:
Jan. 30, 2004
Kazutoshi Shiba, Kanagawa, JP;
Hiroyuki Kunishima, Kanagawa, JP;
Kazutoshi Shiba, Kanagawa, JP;
Hiroyuki Kunishima, Kanagawa, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
There is provided a method of manufacturing a semiconductor device in which interconnect capacitance is restrained. The semiconductor devicecomprises a semiconductor substrate; a second interconnect insulating filmconstituted of a ladder-type hydrogen siloxane formed on the semiconductor substrate; a second protection filmprovided on the second interconnect insulating filmand an upper interconnectformed in the second interconnect insulating filmand the second protection film. The second interconnect insulating filmis constituted of for example an L-Ox™ (trademark) film, and the second protection filmis constituted of for example a silicon oxide film.