The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2007
Filed:
Apr. 29, 2005
Applicants:
Jamal Ramdani, Chandler, AZ (US);
Lyndee L. Hilt, Chandler, AZ (US);
Inventors:
Jamal Ramdani, Chandler, AZ (US);
Lyndee L. Hilt, Chandler, AZ (US);
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
High quality epitaxial layers of GaN can be grown overlying large silicon wafers () by forming an amorphous layer () on the substrate. The amorphous layer dissipates strain and permits the growth of a high quality GaN layer (). Any lattice mismatch between the GaN layer and the underlying substrate is taken care of by the amorphous layer.