The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 01, 2007

Filed:

Mar. 30, 2004
Applicants:

Naoya Sunachi, Tokyo, JP;

Hiroyuki Matsuoka, Tokyo, JP;

Inventors:

Naoya Sunachi, Tokyo, JP;

Hiroyuki Matsuoka, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

An improvement in electrode reliability is realized by preventing over-etching on a peripheral lower portion of an electrode while maintaining the flow of steps of roughening a surface after forming the electrode on a semiconductor substrate. After a P-side electrodeis formed on a main surfaceof a semiconductor substratea surface of the P-side electrodeis selectively covered with a protective filmafter the semiconductor substrateis cut into chips, the surface is roughened from above the protective filmthe main surfacearound the P-side electrodeand a side surface are roughened with a non-chemical treatment regionwhich is a non-roughened surface region being left in a peripheral portion of the P-side electrodecovered with the protective filmand thereafter the protective filmis removed.


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