The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2007
Filed:
Feb. 17, 2005
Hisatada Yasukawa, Kyoto, JP;
Ryouichi Ito, Kyoto, JP;
Takaki Iwai, Osaka, JP;
Masaki Taniguchi, Hyogo, JP;
Yasushi Jin, Osaka, JP;
Hisatada Yasukawa, Kyoto, JP;
Ryouichi Ito, Kyoto, JP;
Takaki Iwai, Osaka, JP;
Masaki Taniguchi, Hyogo, JP;
Yasushi Jin, Osaka, JP;
Matsushita Electric Industrial Co., Ltd, Osaka, JP;
Abstract
A semiconductor photodetector device includes: a first semiconductor layer of a first conductivity type; and a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and having a light-receiving region. The first semiconductor layer includes a first region containing an impurity of the first conductivity type at a high concentration and a second region formed on the first region and containing an impurity of the first conductivity type at a concentration lower than that of the first region. The second semiconductor layer includes a third region containing an impurity of the second conductivity type at a concentration higher than that of the second region and a fourth region formed on the third region and containing an impurity of the second conductivity type at a concentration higher than that of the third region.