The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2007
Filed:
Feb. 25, 2005
Ute Zschieschang, Erlangen, DE;
Hagen Klauk, Erlangen, DE;
Marcus Halik, Erlangen, DE;
Guenter Schmid, Hemhofen, DE;
Stefan Braun, Willich, DE;
Ute Zschieschang, Erlangen, DE;
Hagen Klauk, Erlangen, DE;
Marcus Halik, Erlangen, DE;
Guenter Schmid, Hemhofen, DE;
Stefan Braun, Willich, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A method for fabricating a field effect transistor, in which, after the etching of the gate electrode, the removal of the etching mask is omitted since the etching mask serves as a gate dielectric. The etching mask or the dielectric has a self-assembled monolayer of an organic compound.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile