The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 01, 2007

Filed:

Mar. 31, 2005
Applicants:

Yukio Takigawa, Kawasaki, JP;

Noriyoshi Shimizu, Kawasaki, JP;

Toshiya Suzuki, Kawasaki, JP;

Hajime Kawabe, Kawasaki, JP;

Inventors:

Yukio Takigawa, Kawasaki, JP;

Noriyoshi Shimizu, Kawasaki, JP;

Toshiya Suzuki, Kawasaki, JP;

Hajime Kawabe, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

After an SiC film (), an SiOfilm () and a silicon nitride film () are formed sequentially on an organic low dielectric constant film (), by performing Oplasma processing to a surface of the silicon nitride film (), an oxide layer () is formed on the surface of the silicon nitride film (). Then, a wiring trench pattern is formed on the silicon nitride film () and the oxide layer (), and a resin layer () on which a via hole pattern is formed is formed. Subsequently, a portion of the oxide layer () exposed from the resin layer () is removed along with unnecessary particles.


Find Patent Forward Citations

Loading…