The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2007
Filed:
Sep. 05, 2002
Yukishige Saito, Tokyo, JP;
Risho Koh, Tokyo, JP;
Jyonu RI, Tokyo, JP;
Hisashi Takemura, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device of the present invention includes (a) sequentially forming a gate insulating film, a first conductive layerand a first insulating filmon a semiconductor layerprovided on an insulating film; (b) selectively removing the semiconductor layer, the gate insulating film, the first conductive layer and the first insulating film to form a device isolation trench; (c) forming a second insulating filmin the device isolation [element separation] trench, wherein a height of an upper surface of the second insulating film is substantially coincident with that of an upper surface of the first insulating film; (d) removing a part of the second insulating film and the first insulating film such that a height of an upper surface of the exposed first conductive layer is substantially coincident with that of the top surface of the second insulating film; and (e) patterning the first conductive layer to form a gate electrode.