The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2007
Filed:
Jun. 02, 2004
Derren N. Dunn, Fishkill, NY (US);
Hyungjun Kim, Lagrangeville, NY (US);
Stephen M. Rossnagel, Pleasantville, NY (US);
Soon-cheon Seo, Delmar, NY (US);
Derren N. Dunn, Fishkill, NY (US);
Hyungjun Kim, Lagrangeville, NY (US);
Stephen M. Rossnagel, Pleasantville, NY (US);
Soon-Cheon Seo, Delmar, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods of depositing a tantalum-nitride (TaN) diffusion barrier region on low-k materials. The methods include forming a protective layer on the low-k material substrate by performing plasma-enhanced atomic layer deposition (PE-ALD) from tantalum-based precursor and a nitrogen plasma in a chamber. The protective layer has a nitrogen content greater than its tantalum content. A substantially stoichiometric tantalum-nitride layer is then formed by performing PE-ALD from the tantalum-based precursor and a plasma including hydrogen and nitrogen. The invention also includes the tantalum-nitride diffusion barrier region so formed. In one embodiment, the metal precursor includes tantalum penta-chloride (TaCl). The invention generates a sharp interface between low-k materials and liner materials.